Characterization of photolithographically defined NIS tunnel junctions as X-ray sensors
نویسنده
چکیده
We are developing normal-insulator-superconductor (NE) tunnel junctions for use as X-ray detectors for astronomical purposes and as phonon sensors for dark matter detectors. We are using photolithographic techniques to produce structures in which aluminum is the superconductor, Al,O1 is the tunnel barrier, and copper is the normal metal. We describe microfabrication details and present X-ray pulse data.
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